Micro-electronic device for e.g. complementary MOS image sensor or imager, has metallic interconnection level comprising conductive zones that are respectively connected to conductive zones of another metallic interconnection level

摘要

The device has a set of components formed on a substrate (100), and superimposed metallic interconnection levels (N1-N3) for interconnecting the components. The levels are located in insulating layers (160, 165) placed on the substrate, where the level (N2) has conductive zones (120a-120c) made of copper. The level (N3) is located on the level (N2) and comprises two other conductive zones made of copper and aluminum, respectively. The latter conductive zones are respectively connected to the conductive zones (120b, 120c). An independent claim is also included for a method for forming a micro-electronic device.