Electron multiplying device for e.g. alpha ray detection system, has coating presenting low resistivity characteristics to create electric field, so that multiplication of electrons is high to prevent formation of secondary avalanches

摘要

The device (1) has orifices (5) provided in a plate (2) that is made of epoxy resin or glass. Each orifice has an axis (6) perpendicular to main surfaces of the plate. A coating is provided on the surface and comprises layers (9a, 9b, 12a, 12b) made of gallium arsenide and glass, respectively. The coating presents holes (10, 13) placed in correspondence to the orifices. The coating presents low initial resistivity characteristics to create high amplitude electric field in the orifices, so that avalanche multiplication of electrons is high for preventing formation of secondary avalanches.