SILICON SINGLE CRYSTAL WAFER, METHOD FOR FABRICATING SILICON SINGLE CRYSTAL OR METHOD FOR FABRICATING SILICON SINGLE CRYSTAL WAFER, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon single crystal wafer that does not belong to any of the vacancy-rich V region, the OSF (oxidation-induced stacking fault) region, the Dn (time zero dielectric breakdown) region which is in the Nv region and where a defect detectable by the Cu deposition method may be developed, and the interstitial-silicon-rich I region, and can improve TDDB (time dependent dielectric breakdown) characteristic which is the time-varying destruction characteristic of the oxide film more reliably than conventional, and to provide a stable fabrication method of the silicon single crystal wafer.;SOLUTION: The silicon single crystal wafer grown by Czochralski method is free of any defective region detectable by RIE (reactive ion etching) method, in the N region outside the OSF region formed in a ring when the whole wafer surface is thermally oxidized.;COPYRIGHT: (C)2010,JPO&INPIT