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METHOD OF PLANARIZING SEMICONDUCTOR WAFER, LOCAL PLASMA TREATMENT APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR WAFER

机译:平面化半导体晶片的方法,局部等离子体处理设备以及制造半导体晶片的方法

摘要

PROBLEM TO BE SOLVED: To provide a method of planarizing a semiconductor wafer, a local plasma treatment apparatus, and a method of manufacturing a semiconductor wafer which can shorten the treatment time.;SOLUTION: In the method of planarizing a semiconductor wafer, an etching gas is excited by plasmas to produce a gas containing neutral active species and then the produced gas is locally supplied to the principal plane of the semiconductor wafer to locally etch the semiconductor wafer to planarize the semiconductor wafer. In the method, the in-plane surface of the semiconductor wafer is divided into a plurality of regions having a different profile of an etch rate, and a position to perform local etching is determined in each region so as to suppress a difference in profile of the etch rate among the plurality of regions.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:提供一种可以使处理时间短的半导体晶片的平坦化方法,局部等离子体处理装置以及半导体晶片的制造方法。解决方案:在半导体晶片的平坦化方法中,进行蚀刻。通过等离子体激发气体,以产生包含中性活性物质的气体,然后将所产生的气体局部地供应到半导体晶片的主平面,以局部地蚀刻半导体晶片以平坦化半导体晶片。在该方法中,将半导体晶片的平面内表面划分为蚀刻速率的轮廓不同的多个区域,并在每个区域中确定进行局部蚀刻的位置,以抑制半导体衬底的轮廓差异。 COPYRIGHT:(C)2010,JPO&INPIT

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