ZnO WHISKER FILM, SEED LAYER FOR FORMING ZnO WHISKER FILM AND THOSE MANUFACTURING METHODS

摘要

PROBLEM TO BE SOLVED: To provide a ZnO whisker film formed on a seed layer formed by a non-heating processing and to provide its manufacturing method and application.;SOLUTION: The ZnO whisker film is formed by depositing ZnO on a substrate through the seed layer in a reaction system depositing zinc oxide, and the film has a structure wherein a ZnO whisker is crystal-grown on the seed layer on the surface of the substrate, and the ZnO whisker anisotropic-grown in c axis is oriented and grown orthogonally in a perpendicular and/or a non-perpendicular direction to the substrate, and the seed layer has a thickness which is not observed by FE-SEM observation, and does not have a polycrystalline ZnO seed. In the manufacturing method, a layer of zinc acetate anhydride or zinc nitrate anhydride is formed on the substrate, and a crystal layer of ZnO nanoparticle or single crystal of the seed layer is formed by immersing the layer in a reaction system at a predetermined temperature where zinc oxide is deposited, and ZnO whisker is crystal-grown on the ZnO crystal layer. Its high electroconductive member is provided.;COPYRIGHT: (C)2009,JPO&INPIT