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PLASMA SOURCE EQUIPPED WITH FERRITE STRUCTURE, AND PLASMA GENERATING DEVICE EMPLOYING THE SAME

机译:带有铁素体结构的等离子体源,以及采用相同结构的等离子体发生装置

摘要

PPROBLEM TO BE SOLVED: To provide a plasma source equipped with a ferrite structure in which the ferrite structure is installed in arch shape on a linear antenna of a built-in type inductively coupled plasma generating device and a field formed radially from the linear antenna can be concentrated on a treating substrate, and to provide a plasma generating device employing the same. PSOLUTION: The plasma source comprises a ferrite structure which concentrates a field formed radially from a roof type linear antenna in which one sides of a first antenna and a second antenna formed at the inner upper part in a reaction chamber are connected on a treating substrate direction which is arranged in the reaction chamber. By concentrating the fields formed in radial shape on the treating substrate, power loss is reduced, and density and uniformity of plasma in the reaction chamber are improved to enhance efficiency and yield of the semiconductor manufacturing process. PCOPYRIGHT: (C)2009,JPO&INPIT
机译:

要解决的问题:提供一种配备有铁氧体结构的等离子体源,其中,铁氧体结构以弓形安装在内置式电感耦合等离子体产生装置的线性天线上,并且从该径向形成磁场。线性天线可以集中在处理基板上,并提供使用该线性天线的等离子体产生装置。

解决方案:等离子体源包括铁氧体结构,该铁氧体结构集中了从屋顶型线性天线径向形成的场,其中在反应室内的上部形成的第一天线和第二天线的一侧连接在顶部。处理布置在反应室中的衬底方向。通过将以径向形状形成的场集中在处理基板上,降低了功率损耗,并且提高了反应室中等离子体的密度和均匀性,从而提高了半导体制造工艺的效率和成品率。

版权:(C)2009,日本特许厅&INPIT

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