首页> 外国专利> Being high density, selective growth of the assistance attachment of the carbon nano- tube which is lined up in vertical direction

Being high density, selective growth of the assistance attachment of the carbon nano- tube which is lined up in vertical direction

机译:由于密度高,在垂直方向排列的碳纳米管辅助附件的选择性生长

摘要

The selective growth of vertically aligned, highly dense carbon nanotube (CNT) arrays using a thermal catalytic chemical vapor deposition (CCVD) method via selection of the supporting layer where the thin catalyst layer is deposited on. A thin iron (Fe) catalyst deposited on a supporting layer of tantalum (Ta) yielded CCVD growth of the vertical dense CNT arrays. Cross-sectional transmission electron microscopy revealed a Vollmer-Weber mode of Fe island growth on Ta, with a small contact angle of the islands controlled by the relative surface energies of the supporting layer, the catalyst and their interface. The as-formed Fe island morphology promoted surface diffusion of carbon atoms seeding the growth of the CNTs from the catalyst surface.
机译:使用热催化化学气相沉积(CCVD)方法,通过选择沉积薄催化剂层的支撑层,选择性生长垂直排列的高密度碳纳米管(CNT)阵列。沉积在钽(Ta)支撑层上的薄铁(Fe)催化剂产生了垂直致密CNT阵列的CCVD生长。横截面透射电子显微镜揭示了在Ta上Fe岛生长的Vollmer-Weber模式,岛的接触角很小,受支撑层,催化剂及其界面的相对表面能控制。所形成的Fe岛形态促进了碳原子的表面扩散,从而播种了从催化剂表面生长CNT的种子。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号