SEMICONDUCTOR INTEGRATED CIRCUIT EMPLOYING STANDARD CELL, AND STANDARD CELL LIBRARY

摘要

PROBLEM TO BE SOLVED: To lift restrictions on the driving capability of a standard cell by electromigration in a semiconductor integrated circuit.;SOLUTION: In a standard cell A, the drain region of a P channel MOS transistor 3 and the drain region of an N channel MOS transistor 5 are connected by metal wiring 8 through contact 6 and 5, respectively. The metal wiring 8 is connected with a polysilicon interconnect 10 through a contact 9, and the polysilicon interconnect 10 is connected with a metal wiring 12 through a contact 11. Since the metal wiring 8, the polysilicon interconnect 10 and the metal wiring 12 constitute a single output signal line while having the polysilicon interconnect 10, high resistance output wiring is obtained. Restrictions on the driving capability of a standard cell by electromigration are lifted thereby.;COPYRIGHT: (C)2009,JPO&INPIT