ANTI-STATIC DAMAGE PROTECTIVE ELEMENT, ANTI-STATIC DAMAGE PROTECTIVE CIRCUIT, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an anti-static damage protective element capable of reducing load that is applied between a source and a drain by an electrostatic surge current.;SOLUTION: The anti-static damage protective element 50 includes an n-type source region 4 and an n-type drain region 5 which are formed to be separated from each other by a given distance across a channel region 3 on the surface of a silicon substrate 1, a p-type well region 7 formed to cover the source region 4, an n-type embedded layer 8 formed below the p-type well region 7, and an n-type layer 9 formed to make up a current path between the drain region 5 and the embedded layer 8.;COPYRIGHT: (C)2009,JPO&INPIT