首页> 外国专利> SILICON-MADE NOZZLE SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, DROPLET DISCHARGE HEAD, AND DROPLET DISCHARGE DEVICE

SILICON-MADE NOZZLE SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, DROPLET DISCHARGE HEAD, AND DROPLET DISCHARGE DEVICE

机译:硅制喷嘴基料,其制造方法,液滴排放头和液滴排放装置

摘要

PROBLEM TO BE SOLVED: To provide a nozzle substrate, including a nozzle hole, the nozzle hole having a desired slop to enhance the density of a nozzle, and being formed by a continuous curved surface to optimize the flow passage characteristic.;SOLUTION: The silicon-made nozzle substrate includes the nozzle hole 11 for discharging droplets. The nozzle hole 11 is formed of a continued curved surface of a rotator having a central axis 11d vertical to the substrate surface, in which a sectional area vertical to the central axis 11d is gradually increased from a discharge part 11a to an inlet part 11b, and a sectional shape including the central axis 11d has a linear symmetric index curve 11e with the central axis 11d as a symmetric axis.;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:提供一种包括喷嘴孔的喷嘴基板,该喷嘴孔具有所需的倾斜度以提高喷嘴的密度,并由连续的弯曲表面形成以优化流路特性。硅制喷嘴基板具有用于排出液滴的喷嘴孔11。喷嘴孔11由旋转体的连续弯曲表面形成,该旋转体具有垂直于基板表面的中心轴线11d,其中垂直于中心轴线11d的截面积从排出部分11a到入口部分11b逐渐增大, COPYRIGHT:(C)2009,JPO&INPIT;具有中心轴11d的截面形状具有以中心轴11d为对称轴的线性对称折射率曲线11e。

著录项

  • 公开/公告号JP2009018463A

    专利类型

  • 公开/公告日2009-01-29

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP20070181780

  • 发明设计人 OTANI KAZUFUMI;KOJIMA TSUGUNARI;

    申请日2007-07-11

  • 分类号B41J2/045;B41J2/055;B41J2/135;

  • 国家 JP

  • 入库时间 2022-08-21 19:41:45

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