首页> 外国专利> METHOD FOR PRODUCING SILICON-MADE NOZZLE SUBSTRATE, SILICON-MADE NOZZLE SUBSTRATE, LIQUID DROPLET DISCHARGING HEAD AND APPARATUS FOR DISCHARGING LIQUID DROPLET

METHOD FOR PRODUCING SILICON-MADE NOZZLE SUBSTRATE, SILICON-MADE NOZZLE SUBSTRATE, LIQUID DROPLET DISCHARGING HEAD AND APPARATUS FOR DISCHARGING LIQUID DROPLET

机译:硅质喷嘴基料,硅质喷嘴基料,液滴排放头的制造方法以及液滴排放装置

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a silicon-made nozzle substrate, in which a processing time to form a nozzle throat is shortened and the number of materials to be used is made small, which is excellent in safety and in which the silicon-made nozzle substrate can be produced inexpensively.;SOLUTION: The method for producing the silicon-made nozzle substrate comprises the steps of: forming a film of a silicon-nitrogen compound 101 such as silazane on the surface of a silicon base material 1; firing the formed silicon-nitrogen compound 101 film; applying a resist 102 on the fired silicon-nitrogen compound 101 film to form an opening 102a; forming a liquid introduction-side nozzle throat part 110a whose diameter is made smaller gradually as it goes to the side of the silicon base material 100 on the silicon-nitrogen compound 101 film by wet-etching through the opening 102a formed on the resist 102; and forming a liquid discharge-side nozzle throat part 110b on the silicon base material 1 by dry-etching the fired silicon-nitrogen compound 101 film as a mask.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:提供一种制造硅制喷嘴基板的方法,其中,缩短了形成喷嘴喉的处理时间,并且减少了所使用的材料的数量,这是安全性优异的,并且其中解决方案:用于制造硅制喷嘴基底的方法包括以下步骤:在硅基材的表面上形成诸如硅氮烷的硅氮化合物101的膜。 1;烧制形成的硅氮化合物101膜;在烧制的硅氮化合物101膜上施加抗蚀剂102以形成开口102a;通过通过在抗蚀剂102上形成的开口102a进行湿蚀刻,在硅氮化合物101膜上形成朝向硅基材100侧的直径逐渐变小的液体导入侧喷嘴喉部110a。通过烧蚀作为掩膜的烧制的硅氮化合物101膜,在硅基材1上形成排液侧喷嘴喉部110b。版权所有:(C)2010,日本特许厅&INPIT

著录项

  • 公开/公告号JP2010036462A

    专利类型

  • 公开/公告日2010-02-18

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP20080202209

  • 发明设计人 HARADA MITSUAKI;

    申请日2008-08-05

  • 分类号B41J2/135;

  • 国家 JP

  • 入库时间 2022-08-21 19:03:38

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号