SEMICONDUCTOR ELEMENT DRIVE APPARATUS, POWER CONVERTER, AND MOTOR DRIVE, AND SEMICONDUCTOR ELEMENT DRIVE METHOD, POWER CONVERSION METHOD, AND MOTOR DRIVE METHOD

摘要

PPROBLEM TO BE SOLVED: To provide a high reliability IGBT drive apparatus averting accidents, such as short-circuiting between an upper arm and a lower arm, when a malfunction due to dV/Dt of the connection point 7 of series-connected IGBTs 3, 4 occurs. PSOLUTION: The high-voltage side and low-voltage side IGBTs 3, 4 are controlled so as to be turned on/off complementarily with periods of dead times in between. During these periods of dead times, reset pulses RS for turning off the high-voltage side IGBT 3 are generated, for example, wherein the reset pulses are generated, (1) immediately prior to a turn-on command LD for the low-voltage side IGBT 4, (2) so as to have a period td lapping over this turn-on command LD from immediately prior to the turn-on command LD for the low-voltage side IGBT 4, (3) continuously during a dead time DT period, immediately prior to turning on of the low-voltage side IGBT 4, (5) so as to invalidate the turn-on command for the low-voltage side IGBT, when an on-state of the high-voltage side IGBT 3 is observed. PCOPYRIGHT: (C)2009,JPO&INPIT