The technology which forms the distortion in the silicon based transistor which utilizes the semiconductor layer which includes the atom of high covalent radius and was imbedded

摘要

It is possible to decrease the risk of the stress relief due to the defect of agglomerate conversion and the lattice of germanium the atomic kind where covalent radius is enlarged, the germanium where for example part is substituted at least, by introducing, mechanism of the very effective distortion is offered. To introduce easily due to the epitaxial growth technology which is based on the tin hydride, it is possible the atomic kind where, radius of tin and the like increases.