1st possesses with the edge field which is located around

摘要

PROBLEM TO BE SOLVED: To realize an image display device which is equipped with through-holes different in depth and reduces the change of properties of the metal exposed during through-hole formation.;SOLUTION: The image display device is equipped with a thin-film transistor 2 and a dummy hole 32 in an image display region and a terminal 3 in a marginal region. The dummy hole 32 is formed by the same process as that for the through-holes 31 and 33 and is relatively deeper in the depth as compared to the through-hole 31. Also, the dummy hole 32 opens a predetermined area and is formed apart a predetermined distance from the through-hole 31. The reduction in the change of the properties of the metal exposed at the base of the through-hole 31 is made possible by equipping the image display device with the dummy hole 32.;COPYRIGHT: (C)2005,JPO&NCIPI