DEFECT CORRECTION METHOD FOR MULTI-LEVEL PHOTOMASK AND MULTI-LEVEL PHOTOMASK WITH CORRECTED DEFECT

摘要

PROBLEM TO BE SOLVED: To remove a defect in a halftone part in a multi-level photomask as an ex-post process.;SOLUTION: At least a light-shielding film pattern and a correction semi-transmitting film pattern are formed on a transparent substrate and an overlap part of the light-shielding film pattern and the correction semi-transmitting film pattern is configured in such a manner that the semi-transmitting film covers the light-shielding film and that an excess part d of the overlapped part is in a size equal to or less than the resolution limit of an exposure apparatus. Although the multi-level photomask includes a correction semi-transmitting film pattern different from the original design pattern, such as an excess part in a size equal to or less than the resolution limit of the exposure apparatus, however, because the excess part is in a size equal to or less than the resolution limit of the exposure apparatus, it does not give any influence on an exposure pattern.;COPYRIGHT: (C)2009,JPO&INPIT