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Downstream plasma etching which uses the deflection plasma beam

机译:使用偏转等离子束的下游等离子刻蚀

摘要

Topic Etching method and the etching chamber which can make the radical flow be distributed which occurs from plasma source freely are offered.SolutionsThe etching chamber (1) of etching the baseplate being the method (3) in inside making use of the plasma where the etching chamber (1) is impressed at outside, in order to make radical flow the surface of the baseplate be distributed, between etching processes, directing to the radical flow (7) which it irradiates to the baseplate (3), temporarily, you send one gas jet stream (10) from cross direction at least at least. Selective figure Figure 4
机译:<主题>提供一种可以自由地分配由等离子体源产生的自由基流的蚀刻方法和蚀刻室。解决方案:对基板进行蚀刻的蚀刻室(1)是利用等离子体的内部方法(3),其中刻蚀室(1)的外部刻有痕迹,为了使基本液流在刻蚀过程之间分布,从而使基板的表面均匀分布,并引导至辐射到基板(3)的基本液流(7),至少从横向发送至少一股气流(10)。<选择图>图4

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