The coupling the semiconductor device which includes dielectric layer and the metal layer which are done, the substance in order the coupling to do dielectric layer and metal layer of the production method, and the semiconductor device

摘要

In order on the one hand to passivity to convert dielectric layer of the semiconductor device, and, it is the passivity conversion coupling substance in order with another side, makes the liquid phase metal accumulation with respect to the said dielectric layer possible after that in processing process, or to promote at least. Regarding the example of specification, the said dielectric layer is good even with the porous substance which possesses the permittivity k which is decreased desirably, the passivity conversion coupling substance offers the three-dimensional cover basis which obstructs the adsorption and absorption of the around humidity to in porous dielectric layer substantially. In addition, as for the passivity conversion coupling substance, the said passivity conversion coupling substance being absent, in order to promote the accumulation of the metal to with respect to the dielectric layer in the liquid phase in comparison with metal accumulation, it offers the metal nucleation region. Use of liquid phase metal accumulation method after that makes the production of the semiconductor device easy. Regarding one example, the passivity conversion coupling substance has the plural Si atoms in the chemical composition, it is desirable to make the thermal stability of the said substance increase.