Low distortion varactor circuit device and varactor element

摘要

In; (D2 D1), depletion capacitance of the varactor element is changed when a reverse bias voltage is applied to the varactor element varactor element having a junction region. Varactor elements; are (D1 D2) depletion capacitance empty index obtained by, for example, to provide a doping profile that is determined in advance in the junction region - has a voltage characteristics. Can be used in the varactor stack configuration of narrow tone spacing varactor two elements; (D2 D1); are connected in reverse series connection structure (D1 D2) varactor element. I give a low impedance path for the base-band frequency component of the RF connection node between each of the two and control node. High impedance path for the harmonic frequency components of basic and higher order is given, high impedance path is given by the higher-order fundamental and harmonic frequencies. [Selection] Figure Figure 1