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Fabrication method of single crystal material in which high-density dislocations are arranged linearly in one dimension

机译:高密度位错一维线性排列的单晶材料的制造方法

摘要

Disclosed is a ceramic or metal single-crystal material having high-density dislocations arranged one-dimensionally on respective straight lines. The single-crystal material is produced by compressing a ceramic or metal single-crystal blank at a high temperature from a direction allowing the activation of a single slip to induce plastic deformation therein, and then subjecting the resulting product to a heat treatment. The single-crystal material can be used in a device for high-speed dislocation-pipe diffusion of ions or electrons. The single-crystal material can further be subjected to a diffusion treatment so as to diffuse a metal element from its surface along the dislocations to provide a single-crystal device with a specific electrical conductivity or a quantum wire device. Otherwise, the single-crystal material can be subjected to annealing or chemical etching so as to form nano-holes along the high-density dislocations to provide a thin film device, such as a molecular sieve film or a carbon-dioxide separating film. IMAGE
机译:公开了一种具有高密度位错的陶瓷或金属单晶材料,该高密度位错一维地布置在相应的直线上。通过在高温下从允许单滑动的活化的方向上压缩陶瓷或金属单晶体坯料,然后对其进行热处理,来制造单晶材料。该单晶材料可以用于离子或电子的高速位错管扩散的装置中。可以进一步对单晶材料进行扩散处理,以使金属元素沿其位错从其表面扩散,从而提供具有特定导电性的单晶器件或量子线器件。另外,可以对单晶材料进行退火或化学蚀刻,以沿着高密度位错形成纳米孔,从而提供诸如分子筛膜或二氧化碳分离膜的薄膜装置。 <图像>

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