首页>
外国专利>
Fabrication method of single crystal material in which high-density dislocations are arranged linearly in one dimension
Fabrication method of single crystal material in which high-density dislocations are arranged linearly in one dimension
展开▼
机译:高密度位错一维线性排列的单晶材料的制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Disclosed is a ceramic or metal single-crystal material having high-density dislocations arranged one-dimensionally on respective straight lines. The single-crystal material is produced by compressing a ceramic or metal single-crystal blank at a high temperature from a direction allowing the activation of a single slip to induce plastic deformation therein, and then subjecting the resulting product to a heat treatment. The single-crystal material can be used in a device for high-speed dislocation-pipe diffusion of ions or electrons. The single-crystal material can further be subjected to a diffusion treatment so as to diffuse a metal element from its surface along the dislocations to provide a single-crystal device with a specific electrical conductivity or a quantum wire device. Otherwise, the single-crystal material can be subjected to annealing or chemical etching so as to form nano-holes along the high-density dislocations to provide a thin film device, such as a molecular sieve film or a carbon-dioxide separating film. IMAGE
展开▼