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Negative resistance element using magnetoresistance effect

机译:利用磁阻效应的负电阻元件

摘要

Negativity comprising a magnetoresistive element having a magnetization free layer (33), a magnetization fixed layer (31) having a magnetic moment greater than the magnetic moment of the magnetization free layer, and an intermediate layer (32) disposed between the magnetization free layer and the magnetization fixed layer Resistance element. It is characterized in that a change in the magnetization direction of the magnetization free layer is continuously caused as the voltage applied to the magnetoresistive element is increased so that electrons flow from the magnetization free layer side, thereby showing a negative resistance.
机译:负性包括:具有磁化自由层(33)的磁阻元件,磁矩大于磁化自由层的磁矩的磁化固定层(31),以及设置在磁化自由层与磁化自由层之间的中间层(32)磁化固定层电阻元件。其特征在于,随着施加到磁阻元件上的电压的增加,连续地引起磁化自由层的磁化方向的变化,从而电子从磁化自由层侧流动,从而显示出负电阻。

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