首页>
外国专利>
Negative resistance element using magnetoresistance effect
Negative resistance element using magnetoresistance effect
展开▼
机译:利用磁阻效应的负电阻元件
展开▼
页面导航
摘要
著录项
相似文献
摘要
intermediate layer provided between the magnetization pinned layer having a larger magnetic moment than the magnetic moment of the free layer (33), with the magnetization free layer (31), and the magnetization fixed layer and the magnetization free layer (32) It is a negative resistance element comprising a magneto-resistive element having a. And characterized in that it presents a negative resistance by a change in the magnetization direction of the magnetization free layer is caused continuously with increasing voltage applied to the magnetoresistive element so that electrons flow from the free layer side.
展开▼