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Negative resistance element using magnetoresistance effect

机译:利用磁阻效应的负电阻元件

摘要

intermediate layer provided between the magnetization pinned layer having a larger magnetic moment than the magnetic moment of the free layer (33), with the magnetization free layer (31), and the magnetization fixed layer and the magnetization free layer (32) It is a negative resistance element comprising a magneto-resistive element having a. And characterized in that it presents a negative resistance by a change in the magnetization direction of the magnetization free layer is caused continuously with increasing voltage applied to the magnetoresistive element so that electrons flow from the free layer side.
机译:中间层设置在磁矩比自由层(33)的磁矩大的磁化固定层与磁化自由层(31),磁化固定层和磁化自由层(32)之间。负电阻元件,包括具有a的磁阻元件。并且其特征在于,随着施加到磁阻元件上的电压的增加,连续地引起由于磁化自由层的磁化方向的改变而引起的负电阻,从而电子从自由层侧流动。

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