Etching method, it is low production method of the permittivity dielectric membrane, production method and the etching device and the thin film production device of the porous component

摘要

The etching method of applying CVD of new system and the etching device which can be applied to this are offered. The to plasma converting halogen, with the halogen radical which can and being halogen radical, etching precious metal component 11, it executes with the adsorption process which makes the crystalline germ adsorb which consists of precusor 24 on baseplate 3 can the precious metal component and the precusor 24 which consists of halogen making use of, and the etching process which being halogen radical, anisotropy etches the part to which the crystalline germ of baseplate 3 adsorbs in thickness direction.