首页> 外国专利> ETCHING METHOD, METHOD FOR PRODUCING DIELECTRIC FILM OF LOW DIELECTRIC CONSTANT, METHOD FOR PRODUCING POROUS MEMBER, ETCHING SYSTEM AND THIN FILM FORMING EQUIPMENT

ETCHING METHOD, METHOD FOR PRODUCING DIELECTRIC FILM OF LOW DIELECTRIC CONSTANT, METHOD FOR PRODUCING POROUS MEMBER, ETCHING SYSTEM AND THIN FILM FORMING EQUIPMENT

机译:刻蚀方法,低介电常数的电介质膜的制造方法,多孔构件的制造方法,电蚀系统和薄膜形成设备

摘要

To provide an etching method employing a novel CVD system and an etching apparatus applicable to the method.;In the etching method, performed are an adsorption step of employing halogen radicals generated from a halogen through formation of a plasma thereof, and a precursor 24 formed from the halogen and a noble metal component generated through etching of a noble metal member 11 by the halogen radicals, wherein crystal nuclei of the precursor 24 are caused to be adsorbed on a substrate 3; and an etching step of anisotropically etching, in a thickness direction by the halogen radicals, a portion of the substrate 3 on which the crystal nuclei have been adsorbed.
机译:为了提供一种采用新颖的CVD系统的蚀刻方法和适用于该方法的蚀刻设备;在该蚀刻方法中,进行的吸附步骤是利用通过形成等离子体而从卤素产生的卤素自由基,并形成前体24。卤素和贵金属成分是通过卤素自由基腐蚀贵金属部件11而产生的,其中前体24的晶核被吸附在基板3上。蚀刻步骤是通过卤素自由基在厚度方向上各向异性地蚀刻基板3的吸附有晶核的部分。

著录项

  • 公开/公告号EP1881525A4

    专利类型

  • 公开/公告日2011-05-11

    原文格式PDF

  • 申请/专利权人 CANON ANELVA CORPORATION;

    申请/专利号EP20060745893

  • 发明设计人 KOBAYASHI CHIKAKO;SAKAMOTO HITOSHI;

    申请日2006-04-28

  • 分类号H01L21/3065;H01L21/205;

  • 国家 EP

  • 入库时间 2022-08-21 17:58:40

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