Surface improvement method of the gate insulating layer in the organic thin film transistor and the organic thin film transistor

摘要

Gate insulating layer when it is formed by oxide, from the first, when gate insulating layer it is formed by the substance other than oxide in, it was something which it tries to offer the surface improvement method of the gate insulating layer in the organic thin film transistor and the organic thin film transistor which make that it is possible, to improve the surface of gate insulating layer, with that transistor quality it improves considerably possible, in the organic thin film transistor which laminated organic semiconductor layer with respect to gate insulating layer, formed the electrode in the above-mentioned organic semiconductor layer, gate insulating layer and organic semiconductor layerIn the interval, on the surface of the above-mentioned gate insulating layer, opposing with the above-mentioned organic semiconductor layer, in order to touch, it formed the poly- para xylylene layer which consists of the poly- para xylylene membrane of continuity.