首页> 外国专利> METHOD AND SYSTEM FOR A NON-VOLATILE MEMORY WITH MULTIPLE BITS ERROR CORRECTION AND DETECTION FOR IMPROVING PRODUCTION YIELD

METHOD AND SYSTEM FOR A NON-VOLATILE MEMORY WITH MULTIPLE BITS ERROR CORRECTION AND DETECTION FOR IMPROVING PRODUCTION YIELD

机译:用于提高产量的具有多位误差校正和检测的非挥发性存储器的方法和系统

摘要

A method and system for a non-volatile memory (NVM) with multiple bits error correction are provided and may include detecting bit errors in a memory element, of a NVM array integrated within a chip, which remain uncorrected after forward error correction. A redundant memory element may be utilized when the errors may be detected utilizing a cyclic redundancy check, may be within the NVM array, and may include secure information. Access to the secure information and/or the chip may be disabled when the errors are detected. The FEC operation may include one or both of an error location operation and a correction operation. The errors may be corrected when a location may be known to include the errors. The NVM array may be partitioned into regions. At least one of the redundant memory elements may be substituted in place of the memory element based on a substitution priority.
机译:提供了一种用于具有多位纠错的非易失性存储器(NVM)的方法和系统,其可包括检测集成在芯片内的NVM阵列的存储元件中的位错误,该位错误在前向纠错之后仍未被纠正。当可以利用循环冗余校验来检测错误时,可以在NVM阵列内并且可以包括安全信息时,可以利用冗余存储元件。当检测到错误时,可能会禁止访问安全信息和/或芯片。 FEC操作可以包括错误定位操作和校正操作之一或两者。当已知位置包括错误时,可以纠正错误。 NVM阵列可以被划分成区域。可以基于替换优先级来替换冗余存储元件中的至少一个,以代替存储元件。

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