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Fault Injection In Dynamic Random Access Memory Modules For Performing Built-In Self-Tests

机译:动态随机存取存储器模块中的故障注入,用于执行内置的自检

摘要

Fault injection in dynamic random access memory (‘DRAM’) modules for performing built-in self-tests (‘BISTs’) including establishing, in the mode registers of the DRAM modules by the memory controller through the shared address bus, an injection of a fault into one or more signal lines of a DRAM module, the fault characterized by a fault type; writing data by the memory controller through a data bus to the DRAM modules, the data identifying a particular DRAM module; and responsive to receiving the data, injecting, by the particular DRAM module, the fault characterized by the fault type into the one or more signal lines of the particular DRAM module.
机译:动态随机存取存储器('DRAM')模块中的故障注入,用于执行内置的自检('BIST'),包括由存储器控制器通过共享地址总线在DRAM模块的模式寄存器中建立故障进入DRAM模块的一条或多条信号线,该故障的特征在于故障类型;存储器控制器通过数据总线将数据写入DRAM模块,该数据标识特定的DRAM模块;响应于接收到数据,由特定的DRAM模块将以故障类型为特征的故障注入到特定的DRAM模块的一条或多条信号线中。

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