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System for a Combined Error Correction Code and Cyclic Redundancy Check Code for a Memory Channel

机译:用于存储通道的组合纠错码和循环冗余校验码的系统

摘要

A memory system is provided that performs error correction at a memory device level. The memory system comprises a memory hub device integrated in the memory module and a link interface integrated in the memory hub device that provides a communication pathway between the memory hub device and an external memory controller. The link interface comprises first error correction logic integrated in the link interface that performs error correction operations on first data that is received from the external memory controller via a first memory channel to be transmitted to a set of memory devices. The first error correction logic generates a first error signal to the external memory controller in response to the first error correction logic detecting a first error in the first data. Link interface control logic integrated in the link interface controls the transmission of the first data to the set of memory devices.
机译:提供了一种在存储设备级别执行纠错的存储系统。存储器系统包括集成在存储器模块中的存储器集线器设备和集成在存储器集线器设备中的链接接口,该链接接口提供了存储器集线器设备与外部存储器控制器之间的通信路径。链接接口包括集成在链接接口中的第一错误校正逻辑,该第一错误校正逻辑对经由第一存储通道从外部存储控制器接收的第一数据执行错误校正操作,以传输到一组存储设备。响应于第一错误校正逻辑检测到第一数据中的第一错误,第一错误校正逻辑产生第一错误信号给外部存储器控制器。集成在链接接口中的链接接口控制逻辑控制将第一数据传输到该组存储设备。

著录项

  • 公开/公告号US2009193315A1

    专利类型

  • 公开/公告日2009-07-30

    原文格式PDF

  • 申请/专利权人 KEVIN C. GOWER;WARREN E. MAULE;

    申请/专利号US20080018926

  • 发明设计人 KEVIN C. GOWER;WARREN E. MAULE;

    申请日2008-01-24

  • 分类号H03M13/05;G06F11/10;

  • 国家 US

  • 入库时间 2022-08-21 19:33:22

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