Structure and Method for Monitoring Variation Within an Active Region of a Semiconductor Device Using Scaling

摘要

A semiconductor wafer is provided with one or more parameter scaling metric (PSM) groupings. Each PSM grouping includes a first device having a known active region geometry and further includes a set of one or more devices having active region geometry dimensions in a known relationship with the active region geometry of the first device. One or more parameter scaling metrics are calculated using measured values of one or more active region parameters of interest. The parameter scaling metric(s) can be used to quantify the stability and uniformity of a fabrication process used to make the semiconductor wafer.