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Multiple frequency pulsing of multiple coil source to control plasma ion density radial distribution

机译:多线圈源的多频脉冲控制等离子体离子密度的径向分布

摘要

A method is provided for processing a workpiece supported on a support surface in a chamber of a plasma reactor. A process gas is introduced into the chamber and a plasma is generated with pulse-modulated RF power. The method comprises successively repeating the following cycle: (a) concentrating the plasma in the chamber in a center-high plasma ion distribution for a first on-time duration; (b) permitting plasma to drift during a first off-time duration away from the center-high plasma ion distribution; (c) concentrating the plasma in the chamber in an edge-high plasma ion distribution for a second on-time duration; and (d) permitting plasma to drift during a second off-time duration away from the edge-high plasma ion distribution. The method further comprises adjusting a plasma process rate near a center of the workpiece by adjusting a duty cycle of the first on-time and first off-time. The method also comprises adjusting a plasma process rate near a periphery of the workpiece by adjusting a duty cycle of the second on-time and second off-time.
机译:提供了一种用于处理支撑在等离子体反应器的腔室中的支撑表面上的工件的方法。将处理气体引入腔室,并利用脉冲调制的RF功率生成等离子体。该方法包括依次重复以下循环:(a)在中心高等离子体离子分布中将腔室中的等离子体浓缩第一持续时间; (b)允许等离子体在第一个关闭时间段内偏离中心高等离子体离子分布; (c)在第二次接通时间内以边缘高的等离子体离子分布在腔室中浓缩等离子体; (d)允许等离子体在第二截止时间期间偏离边缘高等离子体离子分布而漂移。该方法还包括通过调节第一接通时间和第一断开时间的占空比来调节在工件的中心附近的等离子体处理速率。该方法还包括通过调节第二接通时间和第二断开时间的占空比来调节在工件的外围附近的等离子体处理速率。

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