CHANNEL STRESS ENGINEERING USING LOCALIZED ION IMPLANTATION INDUCED GATE ELECTRODE VOLUMETRIC CHANGE

摘要

A method for fabricating a semiconductor structure uses a volumetric change ion implanted into a volumetric change portion of a gate electrode that is located over a channel region within a semiconductor substrate to form a volume changed portion of the gate electrode located over the channel region within the semiconductor substrate. The volume changed portion of the gate electrode is typically bidirectionally symmetrically graded in a vertical direction. The volume-changed portion of the gate electrode has a first stress that induces a second stress different than the first stress into the channel region of the semiconductor substrate.