首页>
外国专利>
CHANNEL STRESS ENGINEERING USING LOCALIZED ION IMPLANTATION INDUCED GATE ELECTRODE VOLUMETRIC CHANGE
CHANNEL STRESS ENGINEERING USING LOCALIZED ION IMPLANTATION INDUCED GATE ELECTRODE VOLUMETRIC CHANGE
展开▼
机译:局部离子注入诱导栅电极体积变化的沟道应力工程
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for fabricating a semiconductor structure uses a volumetric change ion implanted into a volumetric change portion of a gate electrode that is located over a channel region within a semiconductor substrate to form a volume changed portion of the gate electrode located over the channel region within the semiconductor substrate. The volume changed portion of the gate electrode is typically bidirectionally symmetrically graded in a vertical direction. The volume- changed portion of the gate electrode has a first stress that induces a second stress different than the first stress into the channel region of the semiconductor substrate.
展开▼