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TECHNIQUE FOR FORMING AN INTERLAYER DIELECTRIC MATERIAL OF INCREASED RELIABILITY ABOVE A STRUCTURE INCLUDING CLOSELY SPACED LINES
TECHNIQUE FOR FORMING AN INTERLAYER DIELECTRIC MATERIAL OF INCREASED RELIABILITY ABOVE A STRUCTURE INCLUDING CLOSELY SPACED LINES
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机译:形成包括紧密间隔线的结构上的可靠性提高的层间介电材料的技术
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摘要
By removing excess material of an interlayer dielectric material deposited by SACVD, the gap filling capabilities of this deposition technique may be exploited, while, on the other hand, negative effects of this material may be reduced. In other aspects, a buffer material, such as silicon dioxide, may be formed prior to depositing the interlayer dielectric material on the basis of SACVD, thereby creating enhanced uniformity during the deposition process when depositing the interlayer dielectric material on dielectric layers having different high intrinsic stress levels. Consequently, the reliability of the interlayer dielectric material may be enhanced while nevertheless maintaining the advantages provided by an SACVD deposition.
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