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Techniques for determining overlay and critical dimension using a single metrology tool
Techniques for determining overlay and critical dimension using a single metrology tool
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机译:使用单个计量工具确定覆盖层和临界尺寸的技术
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摘要
Disclosed are semiconductor targets for measuring with a metrology tool having at least two incident beam modules and techniques for measuring the same. In one embodiment, the target includes an overlay target and a critical dimension (CD) target in the form of periodic features, and the overlay and CD targets are spaced apart by a distance that substantially matches a bore distance between two of the incident beam modules of the metrology tool. In another embodiment, the target includes two overlay targets in the form of periodic features and that are spaced apart by a distance that substantially matches a bore distance between two of the incident beam modules of the metrology tool. In another embodiment, the target includes two CD targets in the form of periodic features and that are spaced apart by a distance that substantially matches a bore distance between two of the incident beam modules of the metrology tool.
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