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MULTI-TIME PROGRAMMABLE MEMORY AND METHOD OF MANUFACTURING THE SAME

机译:多次可编程存储器及其制造方法

摘要

A multi-time programmable (MTP) memory includes a tunneling dielectric layer, a floating gate, an inter-gate dielectric layer and a control gate. The tunneling dielectric layer is disposed on a substrate. The floating gate is disposed on the tunneling dielectric layer. The inter-gate dielectric layer is disposed on the floating gate, and a thickness of the inter-gate dielectric layer at edges of the floating gate is larger than a thickness of the inter-gate dielectric layer in a central portion of the floating gate. The control gate is disposed on the inter-gate dielectric layer.
机译:多次可编程(MTP)存储器包括隧道介电层,浮栅,栅间介电层和控制栅。隧道介电层设置在基板上。浮置栅极设置在隧道介电层上。栅间电介质层设置在浮栅上,并且浮栅的边缘处的栅间电介质层的厚度大于浮栅的中央部分中的栅间电介质层的厚度。控制栅极设置在栅极间电介质层上。

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