REMOVAL OF IONIC RESIDUES OR OXIDES AND PREVENTION OF PHOTO-INDUCED DEFECTS, IONIC CRYSTAL OR OXIDE GROWTH ON PHOTOLITHOGRAPHIC SURFACES

摘要

Techniques associated with surface treatments for photomasks, semiconductor wafers, and/or optics are generally described. In one example, a method includes preparing a surface of a photomask or semiconductor wafer for cleaning, and removing ionic contamination from a surface of a photomask or semiconductor wafer using radical or atomic hydrogen, or suitable combinations thereof, to reduce the ionic contamination, wherein removing ionic contamination reduces the number of defects and increases semiconductor product yields accordingly.