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Method of designing photoelectric conversion apparatus with carefully set antireflective film thickness

机译:精心设置减反射膜厚度的光电转换装置的设计方法

摘要

It is a main object of the present invention to suppress the differences of color ratios of B/G and R/G when the film thicknesses of antireflective films and insulation films vary at a processing process. The present invention is a photoelectric conversion apparatus including a plurality of light receiving portions arranged on a semiconductor substrate, antireflective films formed on the light receiving portions with insulation films put between them, and color filter layers of a plurality of colors formed on the antireflective films, wherein film thicknesses of the insulation films and/or the antireflective films are changed such that changing directions of spectral transmittances at peak wavelengths of color filters on sides of the shortest wavelengths and at peak wavelengths of color filters on sides of the longest wavelengths after transmission of infrared cutting filters may be the same before and after changes.
机译:本发明的主要目的是当在加工过程中抗反射膜和绝缘膜的膜厚变化时,抑制B / G和R / G的色比的差异。本发明是一种光电转换装置,其包括:多个光接收部,其布置在半导体基板上;防反射膜,形成在该光接收部之间,并且绝缘膜置于它们之间;以及,多种颜色的滤色器层,形成在该防反射膜上其中,改变绝缘膜和/或抗反射膜的膜厚,使得透射后在最短波长侧的滤色器的峰值波长处和在最长波长侧的滤色器的峰值波长处的光谱透射率的变化方向改变红外切割滤镜的更换前后可能相同。

著录项

  • 公开/公告号US7518096B2

    专利类型

  • 公开/公告日2009-04-14

    原文格式PDF

  • 申请/专利权人 TOMOYUKI NODA;

    申请/专利号US20040986945

  • 发明设计人 TOMOYUKI NODA;

    申请日2004-11-15

  • 分类号H01L31/00;

  • 国家 US

  • 入库时间 2022-08-21 19:31:05

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