Hardmask compositions for resist underlayer film and method for producing semiconductor integrated circuit device using the same

摘要

Provided herein are hardmask compositions for resist underlayer films, wherein in some embodiments, the hardmask compositions include(a) a first polymer prepared by the reaction of a compound of Formula 1;  wherein n is a number of 3 to 20, with a compound of Formula 2(R)_m—Si—(OCH₃)_4-m  (2)  wherein R is a monovalent organic group and m is 0, 1 or 2; (b) a second polymer that includes at least one of the structures represented by Formulae 3-6; (c) an acid or base catalyst; and (d) an organic solvent. ;Further provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the present invention. In addition, provided herein are semiconductor integrated circuit devices produced by a method embodiment of the invention.