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Low temperature process and structures for polycide power MOSFET with ultra-shallow source
Low temperature process and structures for polycide power MOSFET with ultra-shallow source
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机译:具有超浅源的多晶硅化物功率MOSFET的低温工艺和结构
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摘要
A trench type power semiconductor device includes proud gate electrodes that extend out of the trenches and above the surface of the semiconductor body. These proud gate electrodes allow for making ultra-shallow source regions within the semiconductor body using, for example, a low temperature source drive. In addition, a method for manufacturing the trench type power semiconductor device includes a low temperature process flow once the gate electrodes are formed.
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