installation and methods of manufacture of rods of u0432u044bu0441u043eu043au043eu0447u0438u0441u0442u043eu0433u043e silicon using a u0441u0435u0440u0434u0435u0447u043du0438u043au043eu0432u043eu0433u043e means

摘要

method and installation for the manufacture of rod made of polycrystalline semi-conductor silicon using a u0441u0435u0440u0434u0435u0447u043du0438u043au043eu0432u043eu0433u043e means containing u0440u0430u0437u043cu0435u0449u0435u043du0438 e first u0441u0435u0440u0434u0435u0447u043du0438u043au043eu0432u043eu0433u043e meansmade of u0440u0435u0437u0438u0441u0442u0438u0432u043du043eu0433u043e material, together with the second u0441u0435u0440u0434u0435u0447u043du0438u043au043eu0432u044bu043c tool made of u043au0440u0435u043cu043du0438u0435u0432u043eu0433u043e materialin the inner space of the deposition reactor; electric heating means and the first u0441u0435u0440u0434u0435u0447u043du0438u043au043eu0432u043eu0433u043e preliminary heating of the second u0441u0435u0440u0434u0435u0447u043du0438u043au043eu0432u043eu0433u043e with u0440u0435u0434u0441u0442u0432u0430 first u0441u0435u0440u0434u0435u0447u043du0438u043au043eu0432u044bu043c toolwhich is heated by electric current; electrical heating the pre heated second u0441u0435u0440u0434u0435u0447u043du0438u043au043eu0432u043eu0433u043e means; and an internal reaction gas in u0440u0435u043du043du0435u0435 space conditionwhere the first and second u0441u0435u0440u0434u0435u0447u043du0438u043au043eu0432u043eu0435 means u0441u0435u0440u0434u0435u0447u043du0438u043au043eu0432u043eu0435 means electrically u043du0430u0433u0440u0435u0442u044b for deposition of silicon.