VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS MIT UNTERSCHIEDLICH STARK DOTIERTEN BEREICHEN

摘要

Method for fabricating a semiconductor component (74; 140), particularly a solar cell (140), having regions (70, 72; 120, 122) with different levels of doping, comprising the method steps of forming (2; 14) a layer (58; 108) which inhibits diffusion of a dopant and which can be penetrated by a dopant on at least one portion (56; 106) of the surface of a semiconductor component material (50; 100), of at least partial removal (4;16a, 16b) of the diffusion-inhibiting layer (58; 108) in at least one highly doped region (62; 112a, 112b), of formation (6; 18) of a dopant source (66; 116) on the diffusion-inhibiting layer (58; 108) and in the at least one highly doped region (62; 112a, 112b), and of diffusion (8; 20) of the dopant from the dopant source (66; 116) into the semiconductor component material (50; 100) and also the use thereof in integrated circuits, electronic circuits, solar cell modules and to produce solar cells (140) with a selective emitter structure.