首页> 外国专利> NON-VOLATILE MEMORY SERIAL CORE ARCHITECTURE US2008123423A1

NON-VOLATILE MEMORY SERIAL CORE ARCHITECTURE US2008123423A1

机译:非易失性存储器串行核心架构US2008123423A1

摘要

A memory system having a serial data interface and a serial data path core for receiving data from and for providing data to at least one memory bank as a serial bitstream. The memory bank is divided into two halves, where each half is divided into upper and lower sectors. Each sector provides data in parallel to a shared two-dimensional page buffer with an integrated self column decoding circuit. A serial to parallel data converter within the memory bank couples the parallel data from either half to the serial data path core. The shared two-dimensional page buffer with the integrated self column decoding circuit minimizes circuit and chip area overhead for each bank, and the serial data path core reduces chip area typically used for routing wide data buses. Therefore a multiple memory bank system is implemented without a significant corresponding chip area increase when compared to a single memory bank system having the same density.
机译:一种具有串行数据接口和串行数据路径核心的存储系统,用于作为串行比特流从至少一个存储体接收数据并向其提供数据。存储体分为两半,每半分为上扇区和下扇区。每个扇区通过集成的自列解码电路,将数据并行提供给共享的二维页面缓冲区。存储库中的串行到并行数据转换器将并行数据从任一半耦合到串行数据路径内核。具有集成的自列解码电路的共享二维页面缓冲器使每个存储体的电路和芯片面积开销最小化,而串行数据路径核心减小了通常用于路由宽数据总线的芯片面积。因此,与具有相同密度的单存储体系统相比,实现了多存储体系统而没有显着增加相应的芯片面积。

著录项

  • 公开/公告号IN2009MN00725A

    专利类型

  • 公开/公告日2009-05-22

    原文格式PDF

  • 申请/专利权人

    申请/专利号IN725/MUMNP/2009

  • 发明设计人 KIM JIN KI;

    申请日2009-04-15

  • 分类号G11C11/34;G11C16/04;G11C7/00;G11C5/02;G11C16/06;G11C7/12;G11C16/24;H03M9/00;G11C8/00;G11C16/08;G11C8/18;G11C16/02;G11C16/16;G06F13/16;G11C16/10;G11C7/10;

  • 国家 IN

  • 入库时间 2022-08-21 19:26:51

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