A (110) ORIENTED SILICON SUBSTRATE AND A BONDED PAIR OF SUBSTRATES COMPRISING SAID (110) ORIENTED SILICON SUBSTRATE

摘要

The present invention relates to method of fabricating a (110) oriented silicon substrateand to a method of fabricating a bonded pair of substrates comprising such a (110)oriented silicon substrate. The invention further relates to a silicon substratewith (110) orientation and to a bonded pair of silicon substrates comprising afirst silicon substrate with (100) orientation and a second silicon substrate with(110) orientation. It is the object of the present invention to provide methods andsubstrates of the above mentioned type with a high efficiency wherein the formed(110) substrate has at least near and at its surface virtually no defects. Theobject is solved by a method of fabricating a silicon substrate with (110) orientationand by a method of fabricating a bonded pair of silicon substrates, comprisingthe steps of providing a basic silicon substrate with (110) orientation, saidbasic silicon substrate having a roughness being equal or less than 0.15 nm RMSin a 2x2 μm2 or a 10x10 μm2 scan, and depositing epitaxially a siliconlayer with (110) orientation on the basic silicon substrate at a pressure between40 Torr to 120 Torr, preferably 80 Torr.and at a temperature between about 10000Cand about 12000C and using trichlorosilane or dichlorosilane as silicon precursorgas.