首页> 外国专利> METHODS FOR DEPOSITING A SILICON LAYER ON A LASER SCRIBED TCO LAYER SUITABLE FOR USE IN SOLAR CELL APPLICATIONS

METHODS FOR DEPOSITING A SILICON LAYER ON A LASER SCRIBED TCO LAYER SUITABLE FOR USE IN SOLAR CELL APPLICATIONS

机译:在适合太阳能电池应用的激光刻划TCO层上沉积硅层的方法

摘要

Methods and apparatus for reducing defects on transmitting conducting oxide (TCO) layer are provided. The method includes a method of laser scribing a TCO layer for solar cell applications. In one embodiment, a method for depositing a silicon layer on a transmitting conducting oxide (TCO) layer may include laser scribing a cell-integrated region of a TCO layer disposed on a substrate for solar applications, the TCO layer having a laser scribing free periphery region outward of the cell-integrated region, the periphery region having a width between about 10 mm and about 30 mm measured from an edge of the substrate, transferring the scribed substrate into a deposition chamber, and depositing a silicon containing layer on the TCO layer in the deposition chamber.
机译:提供了用于减少透射导电氧化物(TCO)层上的缺陷的方法和设备。该方法包括激光刻划用于太阳能电池应用的TCO层的方法。在一个实施例中,一种用于在透射导电氧化物(TCO)层上沉积硅层的方法可以包括:激光刻划设置在用于太阳能应用的基板上的TCO层的电池集成区域,该TCO层具有激光刻划的自由外围。单元集成区域之外的区域,从衬底的边缘开始测量的周边区域的宽度在约10mm至约30mm之间,将划线的衬底转移到沉积室中,并在TCO层上沉积含硅层在沉积室中。

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