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METHODS FOR DEPOSITING A SILICON LAYER ON A LASER SCRIBED TRANSMITTING CONDUCTIVE OXIDE LAYER SUITABLE FOR USE IN SOLAR CELL APPLICATIONS

机译:在适于太阳能电池应用的激光刻划透射型导电氧化物层上沉积硅层的方法

摘要

A method for depositing the silicon layer is provided to deposit the silicon layer on the transparent conductive oxide layer which is appropriate for the manufacture of the photovoltaic device. A method for depositing the silicon layer on the TCO(transparency conductivity oxide) layer includes the step for providing the substrate(140) having the transparency conductivity oxide layer placed on the top; the step for positioning the substrate on the substrate support assembly(112) which is arranged within the process chamber; the step for contacting the shadow frame to the peripheral area and the substrate support assembly of the TCO layer; the step for depositing the silicon conductive layer through the hole of the shadow frame on the TCO layer. The TCO layer has the peripheral area and battery integrated domain.
机译:提供一种用于沉积硅层的方法,以在透明导电氧化物层上沉积硅层,该方法适合于光伏器件的制造。在TCO(透明导电氧化物)层上沉积硅层的方法包括以下步骤:提供具有在顶部放置透明导电氧化物层的基板(140);以及在基板(140)上放置透明导电氧化物层的步骤。将基板定位在布置在处理室内的基板支撑组件(112)上的步骤;使阴影框架与TCO层的外围区域和基板支撑组件接触的步骤;通过在TCO层上的阴影框架的孔沉积硅导电层的步骤。 TCO层具有外围区域和电池集成域。

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