HIGH-STRENGTH COLUMNAR CRYSTAL SILICON AND PLASMA ETCHING DEVICE PART FORMED BY THE HIGH-STRENGTH COLUMNAR CRYSTAL SILICON

摘要

Provided is a columnar crystal silicon having a high strength. Plasma etching device parts such as a focus ring, an upper electrode plate, and shield ring are formed from a high-strength columnar crystal silicon ingot having an interstitial oxygen concentration within a range of 1 x 1018 to 2 x 1018 atms/cm3. These parts can further increase their diameters without increasing their thicknesses.