ELECTROABSORPTION MODULATORS WITH A WEAKLY GUIDED OPTICAL WAVEGUIDE MODE

摘要

An electroabsorption modulator comprises an absorption layer (7) between at least one layer of p-doped semiconductor (6) and at least one layer of n-doped semiconductor (8). The layers form a ridge waveguide structure. The thickness of the absorption layer is between 9 and 60 nm and the width of the ridge is between 4.5 and 12 microns.