ELECTROABSORPTION MODULATORS WITH A WEAKLY GUIDED OPTICAL WAVEGUIDE MODE

摘要

An electroabsorption modulator comprises an absorption layer, at least one layer of p-doped semiconductor, and at least one layer of n-doped semiconductor, said absorption layer being provided between said at least one layer of p-doped semiconductor and said at least one layer of n-doped semiconductor, and said layers forming a ridge waveguide structure, wherein the thickness of said absorption layer is between 9 and 60 nm, the width of said absorption layer is between 4.5 and 12 microns, and the width of at least one of said at least one layer of p-doped semiconductor and said at least one layer of n-doped semiconductor is between 4.5 and 12 microns; whereby the width of said ridge waveguide structure is between 4.5 and 12 microns.