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METHOD TO INTRODUCE UNIAXIAL STRAIN IN MULTIGATE NANOSCALE TRANSISTORS BY SELF ALIGNED SI TO SIGE CONVERSION PROCESSES AND STRUCTURES FORMED THEREBY
METHOD TO INTRODUCE UNIAXIAL STRAIN IN MULTIGATE NANOSCALE TRANSISTORS BY SELF ALIGNED SI TO SIGE CONVERSION PROCESSES AND STRUCTURES FORMED THEREBY
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机译:通过自我对准SI到多尺度纳米晶体管中引入单轴应变的方法及由此形成的结构
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摘要
Methods of forming a microelectronic structure are described. Embodiments of those methods may include providing a gate electrode comprising a top surface and first and second laterally opposite sidewalls, wherein a hard mask is disposed on the top surface, a source drain region disposed on opposite sides of the gate electrode, and a spacer disposed on the first and second laterally opposed sidewalls of the gate electrode, forming a silicon germanium layer on exposed portions of the top surface and the first and second laterally opposite sidewalls of the source drain region and then oxidizing a portion of the silicon germanium layer, wherein a germanium portion of the silicon germanium layer is forced down into the source drain region to convert a silicon portion of the source drain region into a silicon germanium portion of the source drain region.
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