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METHOD FOR USING A HARD MASK FOR CRITICAL DIMENSION GROWTH CONTAINMENT
METHOD FOR USING A HARD MASK FOR CRITICAL DIMENSION GROWTH CONTAINMENT
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机译:用于临界尺寸增长限制的硬掩模的方法
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摘要
A method for containing the critical dimension growth of the feature on a semiconductor substrate includes placing a substrate with a hard mask comprised of a reactive metal or an oxidized reactive metal in a chamber and etching the wafer. The method further includes using a hard mask which has a low sputter yield and a low reactivity to the etch chemistry of the process.
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