首页> 外国专利> sp3 BOND BORON NITRIDE EMITTING LIGHT IN ULTRAVIOLET REGION, ITS PRODUCING METHOD, AND FUNCTIONAL MATERIAL USING SAME

sp3 BOND BORON NITRIDE EMITTING LIGHT IN ULTRAVIOLET REGION, ITS PRODUCING METHOD, AND FUNCTIONAL MATERIAL USING SAME

机译:紫外区域中sp3键合氮化硼硼的发光光,其制备方法及使用相同材料的功能材料

摘要

Boron nitride is a material having been mainly used for industrial applications as heat resistant and abrasion-resistant materials. Currently known sp3-bonded BNs are of cubic phase (3C polytypic form) and wurtzite form (2H polytypic form).;The present invention provides a sp3-bonded boron nitride, represented by a general formula BN, having a hexagonal 5H or 6H polytypic form and having a property of emitting light in ultraviolet region.;Its producing method comprises: introducing reaction mixed gas containing boron and nitrogen being diluted with dilution gas into a reaction chamber; and irradiating a surface of a substrate placed in the chamber, a growing surface on the substrate, and a growing spacing region about the growing surface with ultraviolet light to cause gas phase reaction, thereby generating, depositing, or growing the boron nitride on the substrate.;Since the sp3-bonded hexagonal BN of 5H or 6H type has sharp emission at ultraviolet wavelength of 225 nm which is in a range capable of being used in atmosphere but almost borders on a region of vacuum ultraviolet, the BN has great potential as materials for practical application of solid ultraviolet laser. The practical application of solid ultraviolet laser will make immeasurable technical spillover effects on dramatic increase in capacity of rewritable recording media, chemistry, medicine, electronics industry, and others.
机译:氮化硼是主要用作耐热和耐磨材料的工业应用的材料。目前已知的sp3键合的BN是立方相(3C多型形式)和纤锌矿型(2H多型形式)。本发明提供了一种由sp3键合的氮化硼,由通式BN表示,具有六角形的5H或6H多型其制造方法包括:将用稀释气体稀释后的含有硼和氮的反应混合气体引入反应室中。然后用紫外线照射放置在腔室内的基板的表面,基板上的生长表面以及围绕该生长表面的生长间隔区域以引起气相反应,从而在基板上生成,沉积或生长氮化硼。 。;由于5H或6H型的与sp3键合的六方BN在225 nm的紫外线波长处具有能在大气中使用但几乎与真空紫外线区域接壤的范围内的尖锐发射,因此BN具有很大的潜力固体紫外线激光器的实际应用材料。固态紫外激光的实际应用将对可重写记录介质,化学,医药,电子工业等领域的容量急剧增加产生不可估量的技术溢出效应。

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